Issue 29, 2022

Air stable eco-friendly quantum dots with a light-mediated photoinitiator for an inkjet printed flexible light emitting diode

Abstract

Printed quantum dot (QD) light emitting diodes (QLEDs) over a large scale have received much interest in the last decade owing to the demand for the next generation of self-emissive large-area displays. To realize printing technology for QLEDs, a pioneering study suggested using a co-solvent system or a polymer additive in CdSe-based QLEDs. However, limitations on printed QLEDs with eco-friendly QDs, including the selection of ink solvent, environmental degradation of QDs in the air by temperature and O2/H2O level, and viscosity, make it difficult to achieve higher luminescence and external quantum efficiency (EQE) than that of ionic-bonded Cd-based QDs. Herein, we design an air-processable and stable ink with a photoinitiator (PI) mediating cross-linkage between eco-friendly QDs for inkjet-printed QLEDs. Once QD inks with a PI are deposited on the desired surface, their film polymerizes in situ through radical formation induced by ultraviolet (UV) exposure. Cross-linking reactions between ligands in the QDs reduce the distances between them, leading to flattening of the surface and enhancement of environmental stability in air. Printed InP-based green QLEDs demonstrated maximum luminescence values of 3600 cd m−2 at 10 V on ITO/glass for the very first time. Finally, large-scale InP red/green/blue QLEDs directly printed with a bird image were fabricated on the flexible substrate.

Graphical abstract: Air stable eco-friendly quantum dots with a light-mediated photoinitiator for an inkjet printed flexible light emitting diode

Supplementary files

Article information

Article type
Paper
Submitted
01 Mar 2022
Accepted
28 Jun 2022
First published
29 Jun 2022
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2022,10, 10708-10718

Air stable eco-friendly quantum dots with a light-mediated photoinitiator for an inkjet printed flexible light emitting diode

H. Lee, Y. Suh, X. Fan, L. Ni, J. Yang, Y. Kim, J. Jo, H. W. Choi, S. Jung, D. Shin, S. Lee and J. M. Kim, J. Mater. Chem. C, 2022, 10, 10708 DOI: 10.1039/D2TC00851C

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