Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Dmitry Dzhigaev; Johannes Svensson; Abinaya Krishnaraja; Zhongyunshen Zhu; Zhe Ren; Yi Liu; Sebastian Kalbfleisch; Alexander Björling; Filip Lenrick; Zoltan Imre Balogh; Susanna Hammarberg; Jesper Wallentin; Rainer Timm; Lars-Erik Wernersson; Anders Mikkelsen

doi:10.1039/D2NR90060B

Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Dmitry Dzhigaev,*^a Johannes Svensson,^b Abinaya Krishnaraja,^b Zhongyunshen Zhu,^b Zhe Ren,^a Yi Liu,^a Sebastian Kalbfleisch,^c Alexander Björling,^c Filip Lenrick,^a Zoltan Imre Balogh,^d Susanna Hammarberg,^a Jesper Wallentin,^a Rainer Timm,^a Lars-Erik Wernersson^b and Anders Mikkelsen^a

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* Corresponding authors

^a Division of Synchrotron Radiation Research and NanoLund, Department of Physics, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
E-mail: dmitry.dzhigaev@sljus.lu.se

^b Electrical and Information Technology, Department of Engineering, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden

^c MAX IV Laboratory, Lund University, 22100 Lund, Sweden

^d DTU CEN, DTU, Fysikvej 2800, Lyngby, Denmark

Abstract

Correction for ‘Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction’ by Dmitry Dzhigaev et al., Nanoscale, 2020, 12, 14487–14493, DOI: 10.1039/D0NR02260H.

Nanoscale

Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Abstract

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Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

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