Issue 22, 2022

Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

Abstract

Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (InxAl1−xN) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned InxAl1−xN NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In0.68Al0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W−1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures.

Graphical abstract: Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

Supplementary files

Article information

Article type
Paper
Submitted
15 Jul 2022
Accepted
29 Sep 2022
First published
30 Sep 2022
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2022,4, 4886-4894

Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy

H. K. Bangolla, M. Siao, Y. Huang, R. Chen, A. Žukauskaitė, J. Palisaitis, P. O. Å. Persson, L. Hultman, J. Birch and C. Hsiao, Nanoscale Adv., 2022, 4, 4886 DOI: 10.1039/D2NA00456A

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