Issue 11, 2022

Ice-assisted electron-beam lithography for MoS2 transistors with extremely low-energy electrons

Abstract

Ice-assisted electron-beam lithography (iEBL) by patterning ice with a focused electron-beam has emerged as a green nanofabrication technique for building nanostructures on diverse substrates. However, materials like atomically thin molybdenum disulfide (MoS2), can be easily damaged by electron irradiation. To ensure the performance of devices based on sensitive materials, it is critical to control electron-beam induced radiolysis in iEBL processes. In this paper, we demonstrate that electron-beam patterning with extremely low-energy electrons followed by a heating process can significantly reduce the damage to substrate materials. A thin film of water ice not only acts as a sacrificial layer for patterning but also becomes a protecting layer for the underlying materials. As a result, MoS2 field effect transistors with back-gate configuration and ohmic contacts have been successfully fabricated. Moreover, the presence or absence of such a protecting layer can lead to the retention or destruction of the underlying MoS2, which provides a flexible method for creating electrical insulation or connection on 2D materials.

Graphical abstract: Ice-assisted electron-beam lithography for MoS2 transistors with extremely low-energy electrons

Article information

Article type
Paper
Submitted
14 Mar 2022
Accepted
02 May 2022
First published
16 May 2022
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2022,4, 2479-2483

Ice-assisted electron-beam lithography for MoS2 transistors with extremely low-energy electrons

G. Yao, D. Zhao, Y. Hong, R. Zheng and M. Qiu, Nanoscale Adv., 2022, 4, 2479 DOI: 10.1039/D2NA00159D

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