Issue 8, 2022

Giant dielectric response and relaxation behavior in (Tm + Ta) co-doped TiO2 ceramics

Abstract

Dielectric materials with huge dielectric constants are attracting attention due to the growing demand for microelectronics and high energy-storage devices. In this work, Tm + Ta co-doped TiO2 ceramics were prepared by a solid-state reaction (SSR) method, and the microstructure and dielectric behavior were investigated. A ultrahigh permittivity (εr ∼ 2.26 × 104) and very low loss (tan δ ∼ 0.011) are achieved at 1 kHz for (Tm0.5Ta0.5)0.01Ti0.99O2 ceramics. XPS analysis confirms that the high dielectric constant and low dielectric loss are attributed to the electron pinned defect dipole (EPDD) response formed by the coupling of Ti3+ and oxygen vacancies. In addition, impedance analysis and frequency dependent dielectric constant under a DC bias indicate that the presence of the internal barrier layer capacitance (IBLC) response and electrode response at low to medium frequencies (<106 Hz) also contribute significantly to the dielectric constant. The findings reported in this work provide valuable insights into the simultaneous realization of a low dielectric loss and high permittivity in Tm + Ta co-doped TiO2 ceramics and other related dielectric ceramics.

Graphical abstract: Giant dielectric response and relaxation behavior in (Tm + Ta) co-doped TiO2 ceramics

Supplementary files

Article information

Article type
Paper
Submitted
23 Nov 2021
Accepted
27 Jan 2022
First published
28 Jan 2022

Phys. Chem. Chem. Phys., 2022,24, 4759-4768

Giant dielectric response and relaxation behavior in (Tm + Ta) co-doped TiO2 ceramics

J. Fan, Y. Chen, Z. Long, L. Tong, G. He and Z. Hu, Phys. Chem. Chem. Phys., 2022, 24, 4759 DOI: 10.1039/D1CP05348E

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