Surmounting the interband threshold limit by the hot electron excitation of multi-metallic plasmonic AgAuCu NPs for UV photodetector application

Abstract

Multi-metallic alloy NPs composed of various elemental compositions can surmount the interband threshold limit of mono-metallic NPs and thus can offer a promising route to boost up the performance limit of conventional ultraviolet photodetectors (PDs). In this work, a hybrid UV-PD configuration has been demonstrated by combining the multi-metallic plasmonic alloy NPs of AgCu, AuCu, and AgAuCu on a GaN photoactive layer in order to exploit the improved photo carrier injection by the strong hot electrons and LSPR. Among various devices, the tri-metallic AgAuCu NP PD demonstrates the highest performance with a remarkably high photocurrent of 1.47 × 10⁻² A at 1 V with fast rise (T_r) and fall (T_f) times of 170 and 700 ms with a very stable current. This leads to the superior figure-of-merit parameters of the PD with a photoresponsivity of 4.3 × 10⁶ mA W⁻¹, detectivity of 3.52 × 10¹² Jones and EQE of 1.39 × 10⁶%, which is ∼16 times higher than the bare GaN PD. This ranks the AgAuCu PD as one of the best GaN based UV photodetectors. The photocurrent enhancement and excellent figure-of-merit can be attributed to the significantly increased photo carrier injection by the efficient hot electron generation via the LSPR and improved interfacial barrier characteristics by the tri-metallic elemental synergy.