Control of the temperature field by double induction coils for growth of large-sized SiC single crystals via the physical vapor transport technique

Abstract

The temperature field in a growth chamber controlled by double induction coils is simulated via the VR-PVT SiC software for the application of SiC single crystal growth. Four combinations of upper and lower coils are considered, each featuring different turns arranged in an axisymmetric manner around the crucible: 5 + 5, 4 + 6, 3 + 7, and 2 + 8. Our simulated results show that the double induction coils lessen the thermal stress in the grown SiC ingot, enhance the growth rate, increase the utilization of SiC powders, and improve the temperature field via the coil movement. Therefore, double induction coils are a good choice for the growth of large-sized SiC single crystals especially for 8 inch SiC single crystals. The best configuration tested consists of a 4 : 6 turn ratio between the upper and lower coils.