Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

Zhiliang Chen; Yu Yu; Lufan Jin; Yifan Li; Qingyan Li; Tengteng Li; Jie Li; Hongliang Zhao; Yating Zhang; Haitao Dai; Jianquan Yao

doi:10.1039/D0TC90273J

Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

Zhiliang Chen,^a Yu Yu,^a Lufan Jin,^a Yifan Li,^a Qingyan Li,^a Tengteng Li,^a Jie Li,^a Hongliang Zhao,^a Yating Zhang,*^a Haitao Dai^b and Jianquan Yao^a

Author affiliations

* Corresponding authors

^a Key Laboratory of Opto-Electronics Information Technology (Tianjin University), Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China
E-mail: yating@tju.edu.cn

^b Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin, China

Abstract

Correction for ‘Broadband photoelectric tunable quantum dot based resistive random access memory’ by Zhiliang Chen et al., J. Mater. Chem. C, 2020, 8, 2178–2185, DOI: 10.1039/C9TC06230K.

Journal of Materials Chemistry C

Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

Abstract

Associated articles

Article information

Download Citation

Permissions

Correction: Broadband photoelectric tunable quantum dot based resistive random access memory

Social activity

Search articles by author

Spotlight

Advertisements