Issue 14, 2021

Novel Cu–Mg–Ni–Zn–Mn oxide thin film electrodes for NIR photodetector applications

Abstract

This study reports the optical and photoconductive characteristics of the Cu–Mg–Ni–Zn–Mn oxide thin films with and without post-annealing in air. The Cu–Mg–Ni–Zn–Mn oxide thin films reveal a narrow bandgap of 1.96 eV and demonstrate the characteristics of an n-type semiconductor. The thin films exhibit a spinel crystal structure characterized by X-ray diffractometer and transmission electron microscopy. The p+-Si-substrate/Cu–Mg–Ni–Zn–Mn-oxide/indium-tin-oxide sandwich-structure devices were fabricated for the photoconductive characteristic investigation of Cu–Mg–Ni–Zn–Mn oxide thin films deposited by radio-frequency (RF) sputtering. The devices showed a high external quantum efficiency (EQE) of 96% under 800 nm wavelength illumination at a bias of −2 V. A fast response rise-time of 13 ms and a fall-time of 11 ms were also obtained. Hence, the Cu–Mg–Ni–Zn–Mn oxide thin films pave the way for developing high efficiency Schottky barrier photodetectors.

Graphical abstract: Novel Cu–Mg–Ni–Zn–Mn oxide thin film electrodes for NIR photodetector applications

Supplementary files

Article information

Article type
Paper
Submitted
31 Dec 2020
Accepted
09 Mar 2021
First published
15 Mar 2021

J. Mater. Chem. C, 2021,9, 4961-4970

Novel Cu–Mg–Ni–Zn–Mn oxide thin film electrodes for NIR photodetector applications

T. Wang, C. Kuo, P. Chung, C. Liu, Y. Lu, Y. Lee and T. Yew, J. Mater. Chem. C, 2021, 9, 4961 DOI: 10.1039/D0TC06117D

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