Issue 47, 2021

Layer dependence of out-of-plane electrical conductivity and Seebeck coefficient in continuous mono- to multilayer MoS2 films

Abstract

We report on a direct comparison of the out-of-plane thermoelectric properties, such as Seebeck coefficient and electrical conductivity, of atomically thin MoS2 films. The films were prepared by a chemical vapor deposition method and were simultaneously investigated using a Cu-sandwiched structure. Specifically, this is the first study that measures the out-of-plane Seebeck coefficients of atomically thin mono- and bilayer MoS2 at 300 K. At room temperature, out-of-plane Seebeck coefficients for MoS2 films with one, two, and seven layers were measured to be approximately 129.4, 143.3, and 152.2 μV/K, respectively. Such behavior is seen because the increasing number of MoS2 layers increases the density of states of a system. In contrast to conventional thermoelectric materials, the electrical conductivities of these MoS2 films have the same tendency as the Seebeck coefficients. Our results show that thermoelectric devices can utilize the out-of-plane properties of MoS2 thin films with high power factors.

Graphical abstract: Layer dependence of out-of-plane electrical conductivity and Seebeck coefficient in continuous mono- to multilayer MoS2 films

Supplementary files

Article information

Article type
Paper
Submitted
13 Sep 2021
Accepted
10 Nov 2021
First published
10 Nov 2021

J. Mater. Chem. A, 2021,9, 26896-26903

Layer dependence of out-of-plane electrical conductivity and Seebeck coefficient in continuous mono- to multilayer MoS2 films

W. Lee, M. Kang, N. Park, G. Kim, A. D. Nguyen, J. W. Choi, Y. Yoon, Y. S. Kim, H. W. Jang, E. Saitoh and S. Lee, J. Mater. Chem. A, 2021, 9, 26896 DOI: 10.1039/D1TA07854B

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