Issue 37, 2021

Optoelectronic devices based on the integration of halide perovskites with silicon-based materials

Abstract

Halide perovskites are widely used as an absorbing or emitting layer in emerging high-performance optoelectronic devices due to their high absorption coefficients, long charge carrier diffusion lengths, low defect density and intense photoluminescence. Si-based materials (c-Si, a-Si, SixNy, SiCx and SiO2) play important roles in high performance perovskite optoelectronic devices due to the dominance of Si-based microelectronics and the important role of Si-based solar cells in photovoltaics. Controlling the preparation of perovskite materials on the dominant Si optoelectronics platform is a crucial step to realize practical perovskite-based optoelectronic devices. This review highlights the recent progress in Si-based perovskite optoelectronic devices including perovskite/Si tandem solar cells, perovskite/Si photodetectors, perovskite/Si light emitting diodes and optically pumped lasers. The remaining challenge in Si-based perovskite optoelectronic devices research are discussed.

Graphical abstract: Optoelectronic devices based on the integration of halide perovskites with silicon-based materials

Article information

Article type
Review Article
Submitted
28 May 2021
Accepted
26 Aug 2021
First published
26 Aug 2021
This article is Open Access
Creative Commons BY license

J. Mater. Chem. A, 2021,9, 20919-20940

Optoelectronic devices based on the integration of halide perovskites with silicon-based materials

J. Liu, J. Qu, T. Kirchartz and J. Song, J. Mater. Chem. A, 2021, 9, 20919 DOI: 10.1039/D1TA04527J

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