Issue 29, 2021

Tuning the nitrogen-doping configuration in carbon materials via sulfur doping for ultrastable potassium ion storage

Abstract

Nitrogen doping is a promising strategy to improve the potassium-storage performances of carbon materials. It is found that graphitic-N, pyridinic-N and pyrrolic-N always coexist in nitrogen-doped carbon materials prepared by typical synthesis techniques. However, graphitic-N is demonstrated to be unfavorable for the adsorption of potassium ions (K+). Therefore, achieving high-level nitrogen species of pyridinic-N and pyrrolic-N is still a big challenge. Herein, we successfully tune the nitrogen configuration and achieve high-level (85.0%) pyridinic-N and pyrrolic-N in nitrogen-doped carbon materials via sulfur doping. The resulting sulfur-doped nitrogen rich carbon materials (S/N-CMs) exhibit a high reversible capacity of 441.5 mA h g−1 over 100 cycles at 0.1 A g−1, superior rate capability (160.4 mA h g−1 at 5 A g−1), and long-term cycling stability (283.3 mA h g−1 after 1000 cycles at 2 A g−1). The potassium-storage performances are superior to those of most of the carbon materials for potassium ion batteries (KIBs). Density Functional Theory (DFT) calculations confirm that pyridinic-N and pyrrolic-N improve the adsorption ability of K+ in carbon materials, and sulfur doping can further improve the potassium-storage performances of nitrogen-doped carbon materials, synergistically ensuring high potassium-storage capacity and cycling stability for S/N-CMs.

Graphical abstract: Tuning the nitrogen-doping configuration in carbon materials via sulfur doping for ultrastable potassium ion storage

Supplementary files

Article information

Article type
Paper
Submitted
06 May 2021
Accepted
27 Jun 2021
First published
28 Jun 2021

J. Mater. Chem. A, 2021,9, 16150-16159

Tuning the nitrogen-doping configuration in carbon materials via sulfur doping for ultrastable potassium ion storage

Y. Xu, C. Wang, P. Niu, Z. Li, L. Wei, G. Yao, F. Zheng and Q. Chen, J. Mater. Chem. A, 2021, 9, 16150 DOI: 10.1039/D1TA03811G

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