Large-area growth of SnS2 nanosheets by chemical vapor deposition for high-performance photodetectors

Abstract

Two-dimensional tin disulfide (SnS₂) is very popular in electronic, optoelectronic, energy storage, and conversion applications. However, the uncontrollable large-area growth of SnS₂ nanosheets and unsatisfactory performance of the photodetectors based on SnS₂ have hindered its applications. Here, we propose a chemical vapor deposition (CVD) method using SnCl₂ as a precursor to grow SnS₂ nanosheets. We found that the as-grown SnS₂ nanosheets were high-quality crystal structures. Then, photodetectors based on the as-grown SnS₂ were fabricated and, exhibited a high responsivity (1400 A W⁻¹), fast response rate (a response time of 7 ms and a recovery time of 6 ms), perfect external quantum efficiency (EQE) (2.6 × 10⁵%), and remarkable detectivity (D*) (3.1 × 10¹³ Jones). Our work provides a new CVD method to grow high-quality SnS₂ nanosheets.