Issue 48, 2021

SnS2–SnS pn hetero-junction bonded on graphene with boosted charge transfer for lithium storage

Abstract

Despite the advantage of high capacity, practical implementation of the tin disulfide (SnS2) anode for lithium-ion batteries is still plagued by the inferior rate performance due to its low intrinsic electronic conductivity and mediocre ion transport in the bulk. Herein, to address these issues, a peculiar heterojunction of SnS2–SnS quantum dots (QDs) closely coupled with reduced graphene oxide (rGO) sheets was developed. Because of the typical n-type and p-type semiconductor characteristics of SnS2 and SnS, respectively, the formed pn junction at the SnS2/SnS interface will induce a built-in electric field, which can significantly accelerate lithium-ion transport through the SnS2/SnS interface. The ultrafine SnS2 and SnS nano-domains with superlong pn junction interfacial length construct an accelerated lithium-ion diffusion network, while the conductive rGO nanosheets provide a high-speed electron conduction pathway. Meanwhile, the flexible rGO chemically coupled with SnS2/SnS buffers the volumetric variation during repeated lithiation/delithiation processes and guarantees robust structural durability. These merits afford the designed SnS2–SnS/rGO electrode with fast electrode reaction kinetics and good structural durability upon cycling. Consequently, the delicate SnS2–SnS/rGO electrode harvests a superlative rate capability of 926 and 865 mA h g−1 at 5 and 10 A g−1, respectively, and excellent long-term cycling stability with a high reversible capacity of 1075 mA h g−1 at 1 A g−1 up to 1000 cycles with negligible degradation.

Graphical abstract: SnS2–SnS pn hetero-junction bonded on graphene with boosted charge transfer for lithium storage

Supplementary files

Article information

Article type
Paper
Submitted
18 Aug 2021
Accepted
28 Sep 2021
First published
28 Sep 2021

Nanoscale, 2021,13, 20481-20487

SnS2–SnS pn hetero-junction bonded on graphene with boosted charge transfer for lithium storage

J. Wang, Z. Zhang and H. Zhao, Nanoscale, 2021, 13, 20481 DOI: 10.1039/D1NR05438D

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