Issue 33, 2021

CrSbS3 monolayer: a potential phase transition ferromagnetic semiconductor

Abstract

Two dimensional intrinsic ferromagnetic semiconductors with controllable magnetic phase transition are highly desirable for spintronics. Nevertheless, reports on their successful experimental realization are still rare. Herein, based on first principles calculations, we propose to achieve such a functional material, namely CrSbS3 monolayer by exfoliating from its bulk crystal. Intrinsic CrSbS3 monolayer is a ferromagnetic half semiconductor with a moderate bandgap of 1.90 eV. It features an intriguing magnetic phase transition from ferromagnetic to antiferromagnetic when applying a small compressive strain (∼2%), making it ideal for fabricating strain-controlled magnetic switches or memories. In addition, the predicted strong anisotropic absorption of visible light and small effective masses make the CrSbS3 monolayer promising for optoelectronic applications.

Graphical abstract: CrSbS3 monolayer: a potential phase transition ferromagnetic semiconductor

Supplementary files

Article information

Article type
Paper
Submitted
07 Jun 2021
Accepted
21 Jul 2021
First published
22 Jul 2021

Nanoscale, 2021,13, 14067-14072

CrSbS3 monolayer: a potential phase transition ferromagnetic semiconductor

Q. Feng, X. Li, X. Li and J. Yang, Nanoscale, 2021, 13, 14067 DOI: 10.1039/D1NR03640H

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