Issue 33, 2021

Observation of robust charge transfer under strain engineering in two-dimensional MoS2-WSe2 heterostructures

Abstract

Strain is one of the effective ways to modulate the band structure of monolayer transition metal dichalcogenides (TMDCs), which has been reported in theoretical and steady-state spectroscopic studies. However, the strain effects on the charge transfer processes in TMDC heterostructures have not been experimentally addressed thus far. Here, we systematically investigate the strain-mediated transient spectral evolutions corresponding to excitons at band-edge and higher energy states for monolayer MoS2 and monolayer WSe2. It is demonstrated that Γ and K valleys in monolayer WSe2 and monolayer MoS2 present different strain responses, according to the broadband femtosecond pump-probe experimental results. It is further observed that the resulting band offset changes tuned by applied tensile strains in MoS2-WSe2 heterostructures would not affect the band-edge electron transfer profiles, where only monolayer WSe2 is excited. From a flexible optoelectronic applications perspective, the robust charge transfer under strain engineering in TMDC heterostructures is very advantageous.

Graphical abstract: Observation of robust charge transfer under strain engineering in two-dimensional MoS2-WSe2 heterostructures

Supplementary files

Article information

Article type
Paper
Submitted
31 Mar 2021
Accepted
19 Jul 2021
First published
19 Jul 2021

Nanoscale, 2021,13, 14081-14088

Observation of robust charge transfer under strain engineering in two-dimensional MoS2-WSe2 heterostructures

S. Zheng, H. Wang, L. Wang, Y. Luo, B. Gao and H. Sun, Nanoscale, 2021, 13, 14081 DOI: 10.1039/D1NR02014E

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