Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications

Abstract

The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day “alchemy” since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA–VIA, called “Xenes” (where, X = IIIA–VIA group elements, and “ene” is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.