Issue 16, 2021

Enhanced photoluminescence of silicon quantum dots in the presence of both energy transfer enhancement and emission enhancement mechanisms assisted by the double plasmon modes of gold nanorods

Abstract

We propose a scheme utilizing the double plasmon modes of gold nanorods (GNRs) to efficiently increase the Förster resonant energy transfer (FRET) efficiency and enhance the photoluminescence (PL) of Si quantum dots (Si QDs) nearby. Detailed PL and decay dynamics studies are performed for the hybrid nanostructures composed of metallic nanoparticles (MNPs) coated with a Si QD-absorbed silica shell. Plasmon enhanced FRET between Si QDs has been observed and proposed as the third enhancement mechanism for the plasmon-enhanced photoluminescence in addition to excitation enhancement and emission enhancement mechanisms. A maximum FRET efficiency of 46.3% is obtained, which is enhanced by a factor of 8.7 compared to that of samples without MNPs. The dependence of the energy transfer efficiency and the enhancement of the acceptor emission on the surface plasmon resonance (SPR) wavelength, metal-QD distance and QD ratio is examined. The FRET enhancement mechanism dominates when the coupling of plasmon-donor is much stronger than that of plasmon-acceptor with a high acceptor/donor ratio.

Graphical abstract: Enhanced photoluminescence of silicon quantum dots in the presence of both energy transfer enhancement and emission enhancement mechanisms assisted by the double plasmon modes of gold nanorods

Associated articles

Supplementary files

Article information

Article type
Paper
Submitted
19 Apr 2021
Accepted
28 Jun 2021
First published
29 Jun 2021
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2021,3, 4810-4815

Enhanced photoluminescence of silicon quantum dots in the presence of both energy transfer enhancement and emission enhancement mechanisms assisted by the double plasmon modes of gold nanorods

J. Cao, H. Zhang, X. Pi, D. Li and D. Yang, Nanoscale Adv., 2021, 3, 4810 DOI: 10.1039/D1NA00287B

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