Issue 19, 2021

Ba2Ln1−xMn2Te5 (Ln = Pr, Gd, and Yb; x = Ln vacancy): syntheses, crystal structures, optical, resistivity, and electronic structure

Abstract

Three new isostructural quaternary tellurides, Ba2Ln1−xMn2Te5 (Ln = Pr, Gd, and Yb), have been synthesized by the molten-flux method at 1273 K. The single-crystal X-ray diffraction studies at 298(2) K showed that Ba2Ln1−xMn2Te5 crystallize in the space group Image ID:d1dt00057h-t1.gifC2/m of the monoclinic crystal system. There are six unique crystallographic sites in this structure's asymmetric unit: one Ba site, one Ln site, one Mn site, and three Te sites. The Ln site in the Ba2Ln1−xMn2Te5 structure is partially filled, which leaves about one-third of the Ln sites vacant (□) for Pr and Gd compounds. These structures do not contain any homoatomic or metallic bonding and can be charge-balanced as (Ba2+)2(Gd/Pr3+)2/3(Mn2+)2(Te2−)5. The refined composition for the Yb compound is Ba2Yb0.74(1)Mn2Te5 and can be charge-balanced with a mixed valence state of Yb2+/Yb3+. The crystal structures of Ba2Ln1−xMn2Te5 consist of complex layers of 2[Ln1−xMn2Te5]4− stacked along the [100] direction, with Ba2+ cations separating these layers. The Ln atoms are bound to six Te atoms that form a distorted octahedral geometry around the central Ln atom. Each Mn atom in this structure is coordinated to four Te atoms in a distorted tetrahedral fashion. These LnTe6 and MnTe4 units are the main building blocks of the Ba2Ln1−xMn2Te5 structure. The optical absorption study performed on a polycrystalline Ba2Gd2/3Mn2Te5 sample reveals a direct bandgap of 1.06(2) eV consistent with the DFT study. A semiconducting behavior was also observed for polycrystalline Ba2Gd2/3Mn2Te5 from the resistivity study. The temperature-dependent magnetic studies on a polycrystalline sample of Ba2Gd2/3Mn2Te5 did not reveal any long-range magnetic order down to 5 K. The effective magnetic moment (μeff) of 10.37μB calculated using the Curie–Weiss law is in good agreement with the theoretical value (μcal) of 10.58μB.

Graphical abstract: Ba2Ln1−xMn2Te5 (Ln = Pr, Gd, and Yb; x = Ln vacancy): syntheses, crystal structures, optical, resistivity, and electronic structure

Supplementary files

Article information

Article type
Paper
Submitted
07 Jan 2021
Accepted
07 Apr 2021
First published
07 Apr 2021

Dalton Trans., 2021,50, 6688-6701

Ba2Ln1−xMn2Te5 (Ln = Pr, Gd, and Yb; x = Ln vacancy): syntheses, crystal structures, optical, resistivity, and electronic structure

G. Panigrahi, S. Jana, M. Ishtiyak, S. Narayanswamy, P. P. Bhattacharjee, K. V. Ramanujachary, M. K. Niranjan and J. Prakash, Dalton Trans., 2021, 50, 6688 DOI: 10.1039/D1DT00057H

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements