Controllable Vapor Growth of CsPbBr3/CdS 1D Heterostructures with Type-II Band Alignment for High-Performance Self-Powered Photodetector

Abstract

The controllable growth of semiconductor heterostructures with suitable band alignment and morphology is crucial to construct high-performance optoelectronic devices, which is limited to the traditional semiconductor families. Here, high-quality CsPbBr3/CdS heterostructures with the unique 1D morphology and type-II band alignment have been obtained through a 2-step physical vapor deposition (PVD) strategy, in which CsPbBr3 microcubes were grown on the side wall of the pre-grown free-standing CdS microwires. Owing to the effective separation and transportation of photogenerated carriers at the CsPbBr3/CdS heterojunction with type-II band alignment, the photodetector based on a single CsPbBr3/CdS 1D heterostructure showed high self-powered performances (without additional bias supplies), including Ion/Ioff ratio of 3×103, photoresponsivity of 24.5 mA/W, detectivity of 1.09×1012 Jones, detectable spectral ranging from 350 nm to 530 nm and respond speeds of 1.5 ms (rise time) and 14.9 ms (decay time) at the bias of 0 V. This work provides an effective way to the controllable growth of high-quality CsPbX3-based 1D heterostructures, which promotes their practical applications in optoelectronic devices without power consumption.

Article information

Article type
Paper
Submitted
19 Oct 2021
Accepted
24 Nov 2021
First published
24 Nov 2021

CrystEngComm, 2021, Accepted Manuscript

Controllable Vapor Growth of CsPbBr3/CdS 1D Heterostructures with Type-II Band Alignment for High-Performance Self-Powered Photodetector

C. fan, K. Yang, X. Xu, Z. Qi, S. Jiang, M. Xia and Q. Zhang, CrystEngComm, 2021, Accepted Manuscript , DOI: 10.1039/D1CE01409A

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