Effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 grown by molecular beam epitaxy

Abstract

In this study, the effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy has been demonstrated. The nitrogen atoms, with a concentration as high as 2×1019 cm-3, are confirmed to originate from the decomposition of the pyrolytic boron nitride (PBN) crucible in the plasma source. These atoms act as acceptors in β-Ga2O3 and severely compensate the Si-donors, thus, hindering the generation of n-type β-Ga2O3. Instead, a quartz (SiO2) crucible free of nitrogen atom can overcome this issue, leading to the successful generation of n-type β-Ga2O3 with tunable electron concentration in the range 5.0×1016-2.6×1019 cm-3.

Article information

Article type
Paper
Submitted
05 Sep 2021
Accepted
24 Nov 2021
First published
25 Nov 2021

CrystEngComm, 2021, Accepted Manuscript

Effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 grown by molecular beam epitaxy

J. Wei, F. Liu, X. Rong, T. Wang, L. Yang, R. Tao, J. Yang, L. Guo, B. Shen and X. Wang, CrystEngComm, 2021, Accepted Manuscript , DOI: 10.1039/D1CE01207J

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