The in situ formation of a hole-transporting material on bismuth tungstate for innovative photoelectrochemical aptasensing

Tianli Liu; Mengmeng Gu; Lingling Zhao; Xiuming Wu; Zaijun Li; Guang-Li Wang

doi:10.1039/D1CC03745E

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The in situ formation of a hole-transporting material on bismuth tungstate for innovative photoelectrochemical aptasensing†

Tianli Liu,^a Mengmeng Gu,^a Lingling Zhao,^a Xiuming Wu,^a Zaijun Li

^a and Guang-Li Wang

*^a

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* Corresponding authors

^a Key Laboratory of Synthetic and Biological Colloids (Ministry of Education), School of Chemical and Material Engineering, Jiangnan University, Wuxi 214122, China
E-mail: glwang@jiangnan.edu.cn

Abstract

We present the in situ formation of a hole-transporting material (bismuth hexacyanoferrate) on the surface of bismuth tungstate aimed at an innovative photoelectrochemical strategy. This approach enabled a competent aptasensing platform for chloramphenicol that was amenable to homogenous, label-free, and split-mode detection.

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Article information

DOI: https://doi.org/10.1039/D1CC03745E
Article type: Communication
Submitted: 12 Jul 2021
Accepted: 03 Aug 2021
First published: 04 Aug 2021

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Chem. Commun., 2021,57, 8989-8992

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The in situ formation of a hole-transporting material on bismuth tungstate for innovative photoelectrochemical aptasensing

T. Liu, M. Gu, L. Zhao, X. Wu, Z. Li and G. Wang, Chem. Commun., 2021, 57, 8989 DOI: 10.1039/D1CC03745E

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Chemical Communications

The in situ formation of a hole-transporting material on bismuth tungstate for innovative photoelectrochemical aptasensing†

Abstract

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The in situ formation of a hole-transporting material on bismuth tungstate for innovative photoelectrochemical aptasensing

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