High electron mobility, controllable magnetism and anomalous light absorption in a monolayered tin mononitride semiconductor

Abstract

Searching for novel two-dimensional (2D) materials with outstanding physical properties is an important research direction in the field of materials science. Recently, 2D pnictides have attracted considerable interest due to their potential applications in electronics and optoelectronic devices. Here, we theoretically predicted a new main group metal nitride—2D tin mononitride (SnN) having numerous functional merits. With ultrahigh electron mobility (>10⁴ cm² V⁻¹ s⁻¹), robust and electronic-doping controllable ferromagnetism under experimentally achievable conditions as well as abnormally high out-of-plane polarized light absorption in the visible light range, it shows vast possibilities in electronics, spintronics, and photoelectronics. These favorable features will inspire the extended exploration of more main group metal pnictides and their heterostructures for future applications.