One-step growth of centimeter-scale doped multilayer MoS2 films by pulsed laser-induced synthesis

Abstract

Recently, two-dimensional MoS₂ has attracted interest for applications in electronics, optics, energy storage, and catalysis. Furthermore, n-type or p-type doping of MoS₂ can result in improved film properties, thereby expanding the range of applicability. However, the rapid preparation of large-scale MoS₂ films and the effective doping of such films remain challenging. Herein, we report on a one-step growth method called pulsed laser-induced synthesis (PLIS) that can resolve these challenges and can quickly (5–10 min) prepare centimeter-scale MoS₂ films directly and selectively on a substrate. A continuous length of up to 1.412 cm can be achieved with MoS₂ films prepared by the described methods. Moreover, in situ doping of noble metals (Au, Pt, and Pd) to convert MoS₂ into a p-type semiconductor was realized, consistent with the results obtained from first-principles calculations. The STEM images reveal that the phenomena of surface modification and cation substitution occur in the doped MoS₂ films. The doped MoS₂ films were further processed into a p-type field effect transistor with an on/off ratio of 10⁵. Importantly, this technique can be applied to other transition metal dichalcogenides (TMDCs) while employing various doping elements; this scheme provides an innovative method for upscaling production and large-area doping of TMDC thin films.