Issue 48, 2020, Issue in Progress

Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6

Abstract

We report on the successful application of RF-magnetron sputtering to deposit, by using a single type of target, three different materials in the form of thin films within the Cs–Sn–Br compositional range, namely, CsSnBr3, CsSn2Br5 and Cs2SnBr6. It is shown that, by playing with the deposition parameters and post-deposition treatments, it is possible to stabilize these three perovskites or perovskite related compounds by exploiting the versatility of vapor phase deposition. Full characterization in terms of crystal structure, optical properties and morphology is reported. The power of vapor phase methods in growing all-inorganic materials of interest for photovoltaic and optoelectronic applications is demonstrated here, indicating the advantageous use of sputtering for these complex materials.

Graphical abstract: Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6

Supplementary files

Article information

Article type
Paper
Submitted
27 May 2020
Accepted
27 Jul 2020
First published
03 Aug 2020
This article is Open Access
Creative Commons BY license

RSC Adv., 2020,10, 28478-28482

Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6

S. Bonomi, M. Patrini, G. Bongiovanni and L. Malavasi, RSC Adv., 2020, 10, 28478 DOI: 10.1039/D0RA04680A

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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