Cobalt doped BiVO4 with rich oxygen vacancies for efficient photoelectrochemical water oxidation

Guoquan Liu; Fei Li; Yong Zhu; Jiayuan Li; Licheng Sun

doi:10.1039/D0RA01961E

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Cobalt doped BiVO₄ with rich oxygen vacancies for efficient photoelectrochemical water oxidation†

Guoquan Liu,^a Fei Li,

*^a Yong Zhu,^a Jiayuan Li^a and Licheng Sun

^ab

Author affiliations

* Corresponding authors

^a State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Center on Molecular Devices, Dalian University of Technology, Dalian 116024, P. R. China
E-mail: lifei@dlut.edu.cn

^b Department of Chemistry, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, Stockholm 10044, Sweden

Abstract

A facile electrodeposition method was developed to prepare Co-BiVO₄ thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm⁻² 1.23 V (vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO₄.

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Article information

DOI: https://doi.org/10.1039/D0RA01961E
Article type: Paper
Submitted: 01 Mar 2020
Accepted: 12 Jul 2020
First published: 03 Aug 2020
This article is Open Access

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RSC Adv., 2020,10, 28523-28526

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Cobalt doped BiVO₄ with rich oxygen vacancies for efficient photoelectrochemical water oxidation

G. Liu, F. Li, Y. Zhu, J. Li and L. Sun, RSC Adv., 2020, 10, 28523 DOI: 10.1039/D0RA01961E

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