Issue 13, 2020, Issue in Progress

A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage

Abstract

In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO2/SiO2/Si structure has been investigated, where Gd-doped HfO2 acts as a charge trapping and blocking layer. The device demonstrates a large memory window of 5.4 V under a ±5 V sweeping voltage (360% of the device with pure HfO2), which is extremely attractive in low-power applications. In addition, the device also exhibits good retention characteristics with a 24.5% charge loss after the retention time of 1 × 105 seconds and robust endurance performance with a 1% degradation after 1 × 104 program/erase cycles. It is considered that the high density of defect states and the reduction in the defect energy levels induced by Gd-doping contribute to the performance improvement.

Graphical abstract: A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage

Article information

Article type
Paper
Submitted
02 Jan 2020
Accepted
04 Feb 2020
First published
24 Feb 2020
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2020,10, 7812-7816

A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage

Y. Shen, Z. Zhang, Q. Zhang, F. Wei, H. Yin, Q. Wei and K. Men, RSC Adv., 2020, 10, 7812 DOI: 10.1039/D0RA00034E

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