Jump to main content
Jump to site search

Issue 21, 2020
Previous Article Next Article

Epitaxial graphene/Ge interfaces: a minireview

Author affiliations


The recent discovery of the ability to perform direct epitaxial growth of graphene layers on semiconductor Ge surfaces led to a huge interest in this topic. One of the reasons for this interest is the chance to overcome several present-day drawbacks on the method of graphene integration in modern semiconductor technology. The other one is connected with the fundamental studies of the new graphene–semiconductor interfaces that might help with the deeper understanding of mechanisms, which governs graphene growth on different substrates as well as shedding light on the interaction of graphene with these substrates, whose range is now spread from metals to insulators. The present minireview gives a timely overview of the state-of-the-art field of studies of the graphene–Ge epitaxial interfaces and draws some conclusions in this research area.

Graphical abstract: Epitaxial graphene/Ge interfaces: a minireview

Back to tab navigation

Article information

07 Jan 2020
02 May 2020
First published
04 May 2020

Nanoscale, 2020,12, 11416-11426
Article type

Epitaxial graphene/Ge interfaces: a minireview

Y. Dedkov and E. Voloshina, Nanoscale, 2020, 12, 11416
DOI: 10.1039/D0NR00185F

Social activity

Search articles by author