Issue 8, 2020

A P/N type silicon semiconductor loaded with silver nanoparticles used as a SERS substrate to selectively drive the coupling reaction induced by surface plasmons

Abstract

Semiconductor materials are favoured in the field of photocatalysis due to their unique optoelectronic properties. When a semiconductor is excited by external energy, electrons will transition through the band gap, providing electrons or holes for the reaction. This is similar to the chemical enhancement mode of a catalytic reaction initiated by the rough noble metal on the surface excited by plasmon resonance. In this study, different types of semiconductor silicon loaded with silver nanoparticles were used as SERS substrates. SERS detection of p-aminothiophenol (PATP) and p-nitrothiophenol (PNTP) probe molecules was performed using typical surface plasmon-driven coupling reactions, and the mechanism of optical drive charge transfer in semiconductor–metal–molecular systems was investigated. Scanning electron microscopy and plasmon luminescence spectroscopy were used to characterize the silver deposited on the substrate surface. Mapping technology and electrochemistry were used to characterize the photocatalytic reaction of the probe molecules. This study proposed a mechanism for the coupling reaction of “hot electrons” and “hot holes” on the surface of plasmon-driven molecules and provides a method for preparing a stable SERS substrate.

Graphical abstract: A P/N type silicon semiconductor loaded with silver nanoparticles used as a SERS substrate to selectively drive the coupling reaction induced by surface plasmons

Article information

Article type
Paper
Submitted
02 May 2020
Accepted
18 Jun 2020
First published
19 Jun 2020
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2020,2, 3460-3466

A P/N type silicon semiconductor loaded with silver nanoparticles used as a SERS substrate to selectively drive the coupling reaction induced by surface plasmons

Y. Zhao, Q. Zhang, L. Ma, P. Song and L. Xia, Nanoscale Adv., 2020, 2, 3460 DOI: 10.1039/D0NA00350F

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