Establishing a new hot electrons transfer channel by ion doping in a plasmonic metal/semiconductor photocatalyst

Zhiyu Wang; Jiawei Xue; Haibin Pan; Lihui Wu; Jingjing Dong; Heng Cao; Song Sun; Chen Gao; Xiaodi Zhu; Jun Bao

doi:10.1039/D0CP01625J

Establishing a new hot electrons transfer channel by ion doping in a plasmonic metal/semiconductor photocatalyst†

Zhiyu Wang,^a Jiawei Xue,^b Haibin Pan,^a Lihui Wu,^a Jingjing Dong,^a Heng Cao,^a Song Sun,

^ac Chen Gao,^ad Xiaodi Zhu

*^a and Jun Bao

*^a

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* Corresponding authors

^a National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, China
E-mail: zhuxiaodi@ustc.edu.cn, baoj@ustc.edu.cn

^b The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047, Japan

^c School of Chemistry and Chemical Engineering, Anhui University, Hefei, Anhui, China

^d Beijing Advanced Sciences and Innovation Center of Chinese Academy of Sciences, Huairou, Beijing, China

Abstract

A straightforward strategy is developed to improve the injection efficiency of hot electrons in a Ag/TiO₂ plasmonic photocatalyst by introducing Fe as a dopant. The Fe dopant energy level formed within the bandgap of TiO₂ provides an extra electron transfer channel for transferring the hot electrons induced by plasmonic Ag nanoparticles.

Physical Chemistry Chemical Physics

Establishing a new hot electrons transfer channel by ion doping in a plasmonic metal/semiconductor photocatalyst†

Abstract

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Establishing a new hot electrons transfer channel by ion doping in a plasmonic metal/semiconductor photocatalyst

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