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Issue 89, 2020
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A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films

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Abstract

This paper demonstrates a carbene stabilized precursor [Cu(tBuNHC)(hmds)] with suitable volatility, reactivity and thermal stability, that enables the spatial plasma-enhanced atomic layer deposition (APP-ALD) of copper thin films at atmospheric pressure. The resulting conductive and pure copper layers were thoroughly analysed and a comparison of precursor and process with the previously reported silver analogue [Ag(tBuNHC)(hmds)] revealed interesting similarities and notable differences in precursor chemistry and growth characteristics. This first report of APP-ALD grown copper layers is an important starting point for high throughput, low-cost manufacturing of copper films for nano- and optoelectronic devices.

Graphical abstract: A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films

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Supplementary files

Article information


Submitted
26 Aug 2020
Accepted
07 Oct 2020
First published
07 Oct 2020

Chem. Commun., 2020,56, 13752-13755
Article type
Communication

A carbene stabilized precursor for the spatial atomic layer deposition of copper thin films

N. Boysen, B. Misimi, A. Muriqi, J. Wree, T. Hasselmann, D. Rogalla, T. Haeger, D. Theirich, M. Nolan, T. Riedl and A. Devi, Chem. Commun., 2020, 56, 13752
DOI: 10.1039/D0CC05781A

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