(C3H9NI)4AgBiI8: a direct-bandgap layered double perovskite based on a short-chain spacer cation for light absorption

Yunpeng Yao; Bo Kou; Yu Peng; Zhenyue Wu; Lina Li; Sasa Wang; Xinyuan Zhang; Xitao Liu; Junhua Luo

doi:10.1039/C9CC07796K

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(C₃H₉NI)₄AgBiI₈: a direct-bandgap layered double perovskite based on a short-chain spacer cation for light absorption†

Yunpeng Yao,^abc Bo Kou,^a Yu Peng,^abc Zhenyue Wu,^a Lina Li,

^a Sasa Wang,^ab Xinyuan Zhang,^ab Xitao Liu

*^ad and Junhua Luo

*^a

Author affiliations

* Corresponding authors

^a State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
E-mail: xtliu@fjirsm.ac.cn, jhluo@fjirsm.ac.cn

^b University of Chinese Academy of Sciences, Beijing 100049, China

^c School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, China

^d State Key Laboratory of Crystal Materials, Shandong University, Jinan, China

Abstract

A new iodide layered double perovskite (C₃H₉NI)₄AgBiI₈ (IPAB) has been developed based on a short-chain spacer cation, which is the first homologous compound in iodide double perovskites that adopt the Ruddlesden–Popper structure type. Importantly, IPAB is a promising environmentally friendly alternative to the recently rapidly progressing lead halide semiconductors owing to its narrow direct-bandgap of 1.87 eV and excellent stability.

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Article information

DOI: https://doi.org/10.1039/C9CC07796K
Article type: Communication
Submitted: 04 Oct 2019
Accepted: 17 Dec 2019
First published: 18 Feb 2020

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Chem. Commun., 2020,56, 3206-3209

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(C₃H₉NI)₄AgBiI₈: a direct-bandgap layered double perovskite based on a short-chain spacer cation for light absorption

Y. Yao, B. Kou, Y. Peng, Z. Wu, L. Li, S. Wang, X. Zhang, X. Liu and J. Luo, Chem. Commun., 2020, 56, 3206 DOI: 10.1039/C9CC07796K

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