Issue 42, 2019
From the journal:

Journal of Materials Chemistry C

Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation

Qiang Wang, ORCID logo a   Gang Niu, ORCID logo *a   Sourav Roy,a   Yankun Wang,a   Yijun Zhang,a   Heping Wu,a   Shijie Zhai,a   Wei Bai,a   Peng Shi,a   Sannian Song,b   Zhitang Song,b   Ya-Hong Xie,c   Zuo-Guang Ye, ORCID logo d   Christian Wenger,e   Xiangjian Mengf  and  Wei Ren*a  

* Corresponding authors

a Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
E-mail: gangniu@xjtu.edu.cn, wren@mail.xjtu.edu.cn

b State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China

c Department of Materials Science and Engineering, University of California, Los Angeles, California 90095, USA

d Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, Canada

e IHP-Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

f National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

Abstract

Correction for ‘Interface-engineered reliable HfO2-based RRAM for synaptic simulation’ by Qiang Wang et al., J. Mater. Chem. C, 2019, DOI: 10.1039/c9tc04880d.

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Article information

DOI
https://doi.org/10.1039/C9TC90222H
Article type
Correction
Submitted
10 Oct 2019
Accepted
10 Oct 2019
First published
17 Oct 2019
This article is Open Access
Creative Commons BY license

J. Mater. Chem. C, 2019,7, 13307-13307

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Correction: Interface-engineered reliable HfO2-based RRAM for synaptic simulation

Q. Wang, G. Niu, S. Roy, Y. Wang, Y. Zhang, H. Wu, S. Zhai, W. Bai, P. Shi, S. Song, Z. Song, Y. Xie, Z. Ye, C. Wenger, X. Meng and W. Ren, J. Mater. Chem. C, 2019, 7, 13307 DOI: 10.1039/C9TC90222H

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