Issue 40, 2019

π-Extension of electron-accepting dithiarubicene with a cyano-substituted electron-withdrawing group and application in air-stable n-channel organic field effect transistors

Abstract

New π-extended dithiarubicene derivatives with multiply cyano-substituted ethenyl groups at the molecular termini (BisDCNE and BisTCNE) and with a dicyanomethylene-substituted quinoidal structure (TCNQE) were synthesized for application in n-type organic semiconductors. In their absorption spectra, it was observed that their π-conjugations are effectively extended in agreement with the quantum chemical calculation. Thanks to the existence of strong electron-withdrawing groups, BisTCNE and TCNQE exhibited low-lying LUMO energy levels at around −4.2 eV that allow easy electron injection and stable electron transfer under ambient conditions. BisTCNE exhibited the most excellent solubility probably due to the slightly twisted conformation. BisTCNE-based bottom-gate bottom-contact OFET devices exhibited the highest electron mobility (μe) up to 5.5 × 10−2 cm2 V−1 s−1 with an on–off current ratio (Ion/Ioff) more than 105 under vacuum, and can be operated under ambient conditions without the detrimental decrease of electron mobility (μe = 3.3 × 10−2 cm2 V−1 s−1). From GIXRD measurements, BisTCNE and TCNQE were found to show an edge-on molecular orientation on the HMDS-treated SiO2 substrate. It is a remarkable result that devices based on BisTCNE exhibited a much better performance compared to devices fabricated from TCNQE with a quinoidal structure often applied to superior n-type OFETs.

Graphical abstract: π-Extension of electron-accepting dithiarubicene with a cyano-substituted electron-withdrawing group and application in air-stable n-channel organic field effect transistors

Supplementary files

Article information

Article type
Paper
Submitted
07 Aug 2019
Accepted
16 Sep 2019
First published
19 Sep 2019

J. Mater. Chem. C, 2019,7, 12610-12618

π-Extension of electron-accepting dithiarubicene with a cyano-substituted electron-withdrawing group and application in air-stable n-channel organic field effect transistors

K. Tsukamoto, K. Takagi, S. Nagano, M. Hara, Y. Ie, K. Osakada and D. Takeuchi, J. Mater. Chem. C, 2019, 7, 12610 DOI: 10.1039/C9TC04325J

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