Issue 69, 2019

Effects of low dimensionality on electronic structure and thermoelectric properties of bismuth

Abstract

First-principles calculations and Boltzmann transport theory have been combined to comparatively investigate the band structure, phonon spectrum, lattice thermal conductivity, electronic transport properties, Seebeck coefficients, and figure of merit of the β-bismuth monolayer and bulk Bi. Calculation reveals that low dimensionality can bring about the semimetal-semiconductor transition, decrease the lattice thermal conductivity, and increase the Seebeck coefficient of Bi. The relaxation time of electrons and holes is calculated according to the deformation potential theory, and is found to be more accurate than those reported in the literature. It is also shown that compared with Bi bulk, the β-bismuth monolayer possesses much lower electrical conductivity and electric thermal conductivity, while its figure of merit seems much bigger. The derived results are in good agreement with experimental results in the literature, and could provide a deep understanding of various properties of the β-bismuth monolayer.

Graphical abstract: Effects of low dimensionality on electronic structure and thermoelectric properties of bismuth

Article information

Article type
Paper
Submitted
13 Oct 2019
Accepted
02 Dec 2019
First published
09 Dec 2019
This article is Open Access
Creative Commons BY license

RSC Adv., 2019,9, 40670-40680

Effects of low dimensionality on electronic structure and thermoelectric properties of bismuth

C. Y. Wu, L. Sun, J. C. Han and H. R. Gong, RSC Adv., 2019, 9, 40670 DOI: 10.1039/C9RA08341C

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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