Issue 17, 2019, Issue in Progress
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RSC Advances

Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

Jiahe Huang,a   Xiaofeng Zhao,b   Hongyan Zhang,a   Ju Bai,a   Shuhong Wang, ORCID logo *a   Cheng Wang, ORCID logo *ac   Dongge Mad  and  Yanjun Houa  

* Corresponding authors

a School of Chemical Engineering and Materials, Heilongjiang University, Harbin 150080, P. R. China
E-mail: openair@163.com, wangc_93@163.com

b School of Electronic Engineering, Heilongjiang University, Harbin 150080, P. R. China

c Key Laboratory of Functional Inorganic Material Chemistry, Heilongjiang University, Ministry of Education, Harbin 150080, P. R. China

d School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, P. R. China

Abstract

In this study, poly(9,9-dioctylfluorene-2,7-diyl) (PFO) was synthesized through the Suzuki reaction, and it was characterized. A sandwich type memory device based on PFO and PFO:ZnO, was fabricated using rotary-coating technology. I–V characteristics of the device were studied, and the effects of ZnO nanoparticle (NP) doping content on the performances of the device were discussed. The best doping content of ZnO NPs was found by processing the experimental results (4.76 wt%). Also, the stability of the device was tested, and it was found that the device remained stable after a long testing period. Furthermore, the switching mechanism of the device was discussed.

Graphical abstract: Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

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Article information

DOI
https://doi.org/10.1039/C9RA00405J
Article type
Paper
Submitted
17 Jan 2019
Accepted
18 Mar 2019
First published
27 Mar 2019
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2019,9, 9392-9400

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Flash memory devices and bistable nonvolatile resistance switching properties based on PFO doping with ZnO

J. Huang, X. Zhao, H. Zhang, J. Bai, S. Wang, C. Wang, D. Ma and Y. Hou, RSC Adv., 2019, 9, 9392 DOI: 10.1039/C9RA00405J

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