Issue 7, 2019
From the journal:

RSC Advances

Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

Jin-Yong Hong,†a   Kyoung-Hwan Shin,†b   Dai Gun Yoon,*c   Byung Doo Chin*c  and  Sung Hyun Kim*d  

* Corresponding authors

a Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA

b School of Chemical and Biological Engineering, Seoul National University, Seoul 151-747, Republic of Korea

c Department of Polymer Science and Engineering, Dankook University, Youngin 448-701, Republic of Korea
E-mail: bdchin@dankook.ac.kr

d Department of Chemistry, College of Natural Sciences, Seoul National University, Seoul 151-747, Republic of Korea
E-mail: shkim75@snu.ac.kr

Abstract

Correction for ‘All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator’ by Jin-Yong Hong et al., RSC Adv., 2015, 5, 105785–105788.

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Article information

DOI
https://doi.org/10.1039/C8RA90105H
Article type
Correction
Submitted
13 Dec 2018
Accepted
13 Dec 2018
First published
29 Jan 2019
This article is Open Access
Creative Commons BY license

RSC Adv., 2019,9, 3856-3856

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Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator

J. Hong, K. Shin, D. G. Yoon, B. D. Chin and S. H. Kim, RSC Adv., 2019, 9, 3856 DOI: 10.1039/C8RA90105H

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