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Issue 11, 2019
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Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

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Abstract

The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequency current noise spectra revealed that the main electronic noise contribution arises from the resistance fluctuations due to internal dynamical defects of Ag nanofilaments. The resulting 0.01–1% current noise ratio, i.e. the total noise level with respect to the mean value of the current, is found to be universal: its magnitude only depends on the total resistance of the device, irrespective of the materials aspects of the surrounding solid electrolyte and of the specific filament formation procedure. Moreover, the resistance dependence of the current noise ratio also displays the diffusive to ballistic crossover, confirming that stable resistive switching operation utilizing Ag nanofilaments is not compromised even in truly atomic scale junctions by technologically impeding noise levels.

Graphical abstract: Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

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Publication details

The article was received on 10 Dec 2018, accepted on 19 Feb 2019 and first published on 19 Feb 2019


Article type: Communication
DOI: 10.1039/C8NR09985E
Nanoscale, 2019,11, 4719-4725

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    Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

    B. Sánta, Z. Balogh, A. Gubicza, L. Pósa, D. Krisztián, G. Mihály, M. Csontos and A. Halbritter, Nanoscale, 2019, 11, 4719
    DOI: 10.1039/C8NR09985E

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