Issue 8, 2019

Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

Abstract

It has long been recognized that a small switching bias window, which is defined as the difference between the switch-on and switch-off voltages (Δ|VONVOFF|), and a high ON/OFF current ratio would be greatly favorable to reduce the power consumption of memory devices and to decrease the information misreading rate in digital memory devices. In contrast to two-dimensional BP nanosheets, zero dimensional BP quantum dots (BPQDs) show more exciting physical and chemical properties. By using newly synthesized poly[(9,9-dioctyl-9H-fluorene)-alt-(4-(9H-carbazol-9-yl)aniline)] (PFCz-NH2) as the synthetic precursor, a highly soluble diazotated polymer, PFCz-N2+BF4, was successfully synthesized and used to react with BPQDs under aqueous conditions to give the first conjugated polymer covalently functionalized BPQDs (PFCz-g-BPQDs). The as-prepared Al/PFCz-g-BPQDs/ITO device exhibits excellent nonvolatile rewritable memory performance, with a large ON/OFF current ratio (>107) and low switch-on/off voltages (−0.89/+1.95 V). In contrast, the Al/PFCz-NH2 : BPQDs blend/ITO device also shows a rewritable memory effect, but its ON/OFF current ratio and Δ|VONVOFF| value are found to be 3 × 103 and 5.47 (Δ|+2.53–2.94|), respectively. This work, which offers an easy one-step strategy for direct covalent functionalization of BPQDs, opens a way to explore more applications of BPQDs.

Graphical abstract: Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

Supplementary files

Article information

Article type
Communication
Submitted
01 Dec 2018
Accepted
28 Jan 2019
First published
29 Jan 2019

Nanoscale, 2019,11, 3527-3533

Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

Y. Cao, B. Zhang, X. Tian, M. Gu and Y. Chen, Nanoscale, 2019, 11, 3527 DOI: 10.1039/C8NR09711A

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