Jump to main content
Jump to site search

Issue 9, 2019
Previous Article Next Article

Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well

Author affiliations

Abstract

A hot-electron-enabled route to controlling light with dissipative loss compensation in semiconductor quantum light emitters has been realized for tunable quantum optoelectronic devices via a two-species plasmon system. The dual species nano-plasmonic system is achieved by combining UV-plasmonic gallium metal nanoparticles (GaNPs) with visible-plasmonic gold metal nanoparticles (AuNPs) on a near-infrared two-dimensional GaAs/AlGaAs quantum well emitter. It has been demonstrated that while hot carrier-powered charge-transfer processes can result in semiconductor doping and increased optical absorption, photo-generated carrier density in the quantum well can also be modulated by off-resonant plasmonic interaction without thermal dissipation. Merging these essential emitter-friendly optical characteristics in the two-species plasmon system, we effectively modulate the frequency of the emitted light. The wavelength of the emitted light is tuned by the plasmonically powered hot electron process induced by the AuNPs with a 10-fold emission enhancement induced by the GaNPs. The additional plasmonic element provides functionality to achieving an active plasmonic light emitter that is otherwise far from reach with conventional single plasmonic material-based semiconductors.

Graphical abstract: Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well

Back to tab navigation

Supplementary files

Publication details

The article was received on 14 Sep 2018, accepted on 26 Nov 2018 and first published on 10 Dec 2018


Article type: Paper
DOI: 10.1039/C8NR07489E
Citation: Nanoscale, 2019,11, 3827-3836
  • Open access: Creative Commons BY-NC license
  •   Request permissions

    Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well

    E. Ashalley, K. Gryczynski, Z. Wang, G. Salamo and A. Neogi, Nanoscale, 2019, 11, 3827
    DOI: 10.1039/C8NR07489E

    This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements