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Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

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Abstract

We studied the pseudo-homeothermic synaptic behaviors by integrating complimentary metal–oxide–semiconductor-compatible materials (hafnium oxide, aluminum oxide, and silicon substrate). A wide range of temperatures, from 25 °C up to 145 °C, in neuronal dynamics was achieved owing to the homeothermic properties and the possibility of spike-induced synaptic behaviors was demonstrated, both presenting critical milestones for the use of emerging memristor-type neuromorphic computing systems in the near future. Biological synaptic behaviors, such as long-term potentiation, long-term depression, and spike-timing-dependent plasticity, are developed systematically, and comprehensive neural network analysis is used for temperature changes and to conform spike-induced neuronal dynamics, providing a new research regime of neurocomputing for potentially harsh environments to overcome the self-heating issue in neuromorphic chips.

Graphical abstract: Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

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Publication details

The article was received on 21 Aug 2018, accepted on 22 Nov 2018 and first published on 27 Nov 2018


Article type: Paper
DOI: 10.1039/C8NR06694A
Citation: Nanoscale, 2019, Advance Article
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    Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

    S. Kim, J. Chen, Y. Chen, M. Kim, H. Kim, M. Kwon, S. Hwang, M. Ismail, Y. Li, X. Miao, Y. Chang and B. Park, Nanoscale, 2019, Advance Article , DOI: 10.1039/C8NR06694A

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