Issue 11, 2019
From the journal:

Physical Chemistry Chemical Physics

Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon†

Shenli Zhang,‡a   Yihan Huang,a   Gulcin Tetiker,b   Saravanapriyan Sriraman,b   Alex Patersonb  and  Roland Faller ORCID logo *c  

* Corresponding authors

a Department of Materials Science & Engineering, University of California, Davis, One Shields Avenue, Davis, CA, USA

b Lam Research Corporation, Fremont, CA 94538, USA

c Department of Chemical Engineering, University of California, Davis, One Shields Avenue, Davis, CA, USA
E-mail: rfaller@ucdavis.edu

Abstract

The atomic layer etching of chlorinated germanium surfaces under argon bombardment was simulated using molecular dynamics with a newly fitted Tersoff potential. The chlorination energy determines the threshold energy for etching and the number of etched atoms in the bombardment phase. Etch rate is determined by bombardment energy.

Graphical abstract: Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

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Article information

DOI
https://doi.org/10.1039/C9CP00125E
Article type
Communication
Submitted
08 Jan 2019
Accepted
19 Feb 2019
First published
20 Feb 2019

Phys. Chem. Chem. Phys., 2019,21, 5898-5902

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Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon

S. Zhang, Y. Huang, G. Tetiker, S. Sriraman, A. Paterson and R. Faller, Phys. Chem. Chem. Phys., 2019, 21, 5898 DOI: 10.1039/C9CP00125E

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