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Effects of phosphorus with Mn3P2 as additive on diamonds growth along (100) surface


In this study, diamond crystals were synthesized via temperature gradient method at 5.6 GPa and 1230-1245 ℃ by adding Mn3P2 dopant and FeNi solvent catalyst. Experimental results show that Mn3P2 shifted the V-shape growth region move to up and right by influencing the catalytic properties. The scanning electron microscope (SEM) photographs of diamonds synthesized at 1245 ℃ reveal that there are many dendritic structures in the (100) surfaces. The diamond crystals quality can be improved when the Mn3P2 additive is less than 6 wt% at 1245 ℃, but it would be seriously damaged when Mn3P2 is heavily doped. The pits and uneven layered structures appeared on diamond surfaces when the additive arrived 12 wt% at 1245 ℃. The Fourier Transform infrared spectroscopy (FTIR) spectra reveal that Mn3P2 additive increases the N content of the crystal and N is present in the diamond crystal in the form of a “C” center. It is worth noting that phosphorus can be doped into diamond crystals by additive Mn3P2 and other impurities in diamonds are mostly C-N and C-O forms by X-ray photoelectron spectroscopy (XPS) test. The phosphorus in the sample crystals mainly formed the C-P bonds with carbon and a smaller amount of phosphorus formed the P-O bonds with oxygen. It can be shown from the test results of the electrical properties by Van der Pauw method that diamond crystals with Mn3P2 doped at 1245 ℃, whose resistivity are 0.516×106 ~ 9.729×106 Ω•cm and Hall coefficient is negative, belong to n-type semiconductor.

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Publication details

The article was received on 13 Aug 2019, accepted on 07 Oct 2019 and first published on 09 Oct 2019

Article type: Paper
DOI: 10.1039/C9CE01257E
CrystEngComm, 2019, Accepted Manuscript

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    Effects of phosphorus with Mn3P2 as additive on diamonds growth along (100) surface

    K. Yu, S. Li, Q. Yang, K. Leng, M. Hu, T. Su, M. Guo, G. Gao, J. Wang and Y. You, CrystEngComm, 2019, Accepted Manuscript , DOI: 10.1039/C9CE01257E

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