Issue 35, 2019
From the journal:

CrystEngComm

A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

Wei Lu,†ab   Xiaoyi Wang, ORCID logo †a   Yongjun Ma,c   Salvatore Grassod  and  Ming Xu*a  

* Corresponding authors

a Key Laboratory of Information Materials of Sichuan Province, School of Electrical and Information Engineering, Southwest University for Nationalities, Chengdu 610041, China
E-mail: hsuming_2001@aliyun.com

b State Key Laboratory of precision Measurement Technology and Instruments, School of Precision Instrument and Opto-electronics Engineering, Tianjin University, No 92 Weijin Road, Tianjin 300072, China

c Southwest University Science and Technology, Analytical and Test Center, Mianyang 621010, China

d Key laboratory of Advanced technologies of Materials, Ministry of Education, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China

Abstract

We report a low-power and low-temperature radio frequency reactive magnetron sputtering to grow highly c-axis oriented wurtzite Al0.36In0.64N thin films on a Si (111) substrate using a unique AlN/AlInN bi-layer buffer, which creates the possibility to grow high crystal quality Al0.36In0.64N.

Graphical abstract: A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

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Article information

DOI
https://doi.org/10.1039/C9CE00813F
Article type
Communication
Submitted
26 May 2019
Accepted
11 Jul 2019
First published
11 Jul 2019

CrystEngComm, 2019,21, 5211-5215

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A bi-layer buffer system AlN/Al1−xInxN to enable the growth of high crystal quality Al0.36In0.64N thin films on Si (111)

W. Lu, X. Wang, Y. Ma, S. Grasso and M. Xu, CrystEngComm, 2019, 21, 5211 DOI: 10.1039/C9CE00813F

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