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Dependence of Structure and Orientation of VSS grown Si nanowires on Epitaxy Process

Abstract

We investigated vapor-solid-solid growth of Si nanowires from Ni silicide on substrates of Si (111), Si (110), and GaN. The morphology and structures of Si on these substrates are distinctive, which is dependent on substrate lattices and epitaqxy process during growth. The sidewall facets and epitaxy of silicides and Si were discussed. In addition, Si grown on GaN nanowires was investigated which led the formation of branched nanowire structures. The Si nanowires/nanodots lay on the surface of GaN nanowires to maintain lower system energy. We manipulated the whole process in UHV and understand the crystal growth of Si on different latticed substrates. Whereas, the process occurred at non-UHV led to less regularity on NiSi2 crystal facets and interface epitaxy between NiSi2 and Si nanowires.

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Supplementary files

Publication details

The article was received on 10 Apr 2019, accepted on 10 Jun 2019 and first published on 11 Jun 2019


Article type: Paper
DOI: 10.1039/C9CE00539K
CrystEngComm, 2019, Accepted Manuscript

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    Dependence of Structure and Orientation of VSS grown Si nanowires on Epitaxy Process

    Y. Chiang, Y. Chou, C. Huang, W. Lin and Y. Chou, CrystEngComm, 2019, Accepted Manuscript , DOI: 10.1039/C9CE00539K

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