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Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography

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Abstract

We have studied the lattice-plane modulation of Mg-doped GaN homoepitaxial layers by X-ray diffraction topography. X-ray rocking curve images and full-width at half maxima images of a 2 inch GaN wafer were obtained by an image stacking method. Low frequency components evaluated from Fourier transformations of the X-ray rocking curves tended to increase as the Mg-doping concentration increased, which indicates an increase of film lattice modulation. For Mg-dopant concentrations greater than 1019 cm−3, the film lattice-plane changed from a convex to concave shape and became wrinkled. We attribute this lattice-plane modulation to the relaxation of strain in the in-plane direction after the generation of dislocations by Mg doping.

Graphical abstract: Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography

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Publication details

The article was received on 07 Nov 2018, accepted on 04 Feb 2019 and first published on 11 Mar 2019


Article type: Paper
DOI: 10.1039/C8CE01906A
Citation: CrystEngComm, 2019, Advance Article
  • Open access: Creative Commons BY-NC license
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    Lattice-plane bending angle modulation of Mg-doped GaN homoepitaxial layer observed by X-ray diffraction topography

    J. Kim, O. Seo, C. Song, S. Hiroi, Y. Chen, Y. Irokawa, T. Nabatame, Y. Koide and O. Sakata, CrystEngComm, 2019, Advance Article , DOI: 10.1039/C8CE01906A

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