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Influence of temperature and oxygen on the growth of large-scale SiC nanowires

Abstract

This paper examined the influence of temperature and oxygen on the growth of large-scale silicon carbide nanowires by using the combination of sol-gel impregnation and carbothermal reduction methods. To investigate the growth process of SiC nanowires, the microstructural changes of nanowires at different temperatures from 1050 to 1550 ℃ were observed by SEM. XRD, TEM and FTIR were also used to analyze the nucleation, the crystal structure and the chemical phase of SiC nanowires. XPS revealed the chemical reactions during the growth of SiC nanowires. Also evaluated in this paper were the impacts of temperature and oxygen from SiOC (an intermediate) on the growth of SiC nanowires. Results showed that a proper temperature was necessary for the nucleation and growth of SiC nanowiress. Findings also indicated that presence of O2 could contribute to the growth of longer SiC nanowires.

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Publication details

The article was received on 28 Oct 2018, accepted on 09 Feb 2019 and first published on 11 Feb 2019


Article type: Paper
DOI: 10.1039/C8CE01844H
Citation: CrystEngComm, 2019, Accepted Manuscript

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    Influence of temperature and oxygen on the growth of large-scale SiC nanowires

    H. Lin, H. Li, T. Wang, Q. Shen, X. Shi and T. Feng, CrystEngComm, 2019, Accepted Manuscript , DOI: 10.1039/C8CE01844H

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