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Issue 5, 2019
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Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity

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Abstract

Non-polar ZnO films with extremely low electrical resistivity are obtained through thermal activation under an oxygen-deficient atmosphere. The excitation of donor-type defects confirmed by Hall effect measurement leads to directly observed displacement of Zn atoms. The thermally activated non-polar ZnO/Si (100) heterostructures could have important applications as one-dimensional ZnO nanomaterials in the electronic/opto-electronic field.

Graphical abstract: Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity

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Publication details

The article was received on 19 Oct 2018, accepted on 12 Dec 2018 and first published on 13 Dec 2018


Article type: Communication
DOI: 10.1039/C8CE01794H
CrystEngComm, 2019,21, 791-795

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    Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity

    L. Qi, B. Sun, W. Wang, J. Zhang, H. Yang and Y. Qi, CrystEngComm, 2019, 21, 791
    DOI: 10.1039/C8CE01794H

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