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Issue 2, 2019
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Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (11[2 with combining macron]2) GaN templates

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Abstract

Semipolar (11[2 with combining macron]2) GaN templates are improved by interface modification and employed as growth templates for green-amber-emitting high indium content InGaN/GaN quantum wells (QWs). The interface modification is realized by high-temperature annealing of an inserted low-temperature GaN layer, which enhances adatom diffusion and site-selectively blocks defects for interface-modified GaN templates. The luminescence properties of the InGaN/GaN QWs grown on the semipolar GaN templates are significantly enhanced by the interface modification. Green-amber emission with double peaks at 520 and 600 nm is observed for the InGaN/GaN QWs grown on the interface-modified semipolar GaN templates and is attributed to a) improvement in overlapping of the electron and hole wave functions due to weak polarization fields for growth along (11[2 with combining macron]2), b) enhancement in interband transitions involving the excited quantized carrier states, and c) reduction in electron loss at high injection currents due to reduction of threading defect density in the interface-modified semipolar GaN templates.

Graphical abstract: Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (11 [[2 with combining macron]] 2) GaN templates

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Publication details

The article was received on 26 Sep 2018, accepted on 12 Nov 2018 and first published on 12 Nov 2018


Article type: Paper
DOI: 10.1039/C8CE01648H
CrystEngComm, 2019,21, 244-250

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    Green-amber emission from high indium content InGaN quantum wells improved by interface modification of semipolar (11[2 with combining macron]2) GaN templates

    Z. Wu, S. Lu, P. Yang, P. Tian, L. Hu, R. Liu, J. Kang and Z. Fang, CrystEngComm, 2019, 21, 244
    DOI: 10.1039/C8CE01648H

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