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Fabrication of nano-patterned sapphire substrates combining nanoimprint lithography with edge effects

Abstract

Volcano-shaped nano-patterned sapphire substrate (VNPSS) was fabricated by nanoimprint lithography and wet etching. The edge effects were used to form the ring mask for wet etching. The widths of the SiO2 rings were obtained as 136 and 91 nm by changing reactive ion etching time.The crystal planes were determined to be {11 @#x0305;02 @#x0305;} and {11 @#x0305;05 @#x0305;} for the etching facets of the outside and inside of the ring, respectively. X-ray diffraction rocking curves indicate that the dislocation density of the GaN epilayer on the VNPSS is lower than that on the nano-patterned sapphrie substrate (NPSS). Temperature-denpendent photoluminescence results show that the internal quantum efficiency of the GaN-based light emitting diode (LED) on the VNPSS is 24% larger than that on the NPSS, which is due to the improved crystal quality. 3-D finite difference time domain (FDTD) simulations show that the light extraction efficiency (LEE) of the GaN-based LED on the VNPSS is 21% more than that of the LED on NPSS, which conforms to the LEE enhancement by PL measurement. The use of edge effects provides ideas for preparing complex NPSS patterns with commonly used imprint stamps to further increase crystal quality and LEE.

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Publication details

The article was received on 28 Jun 2018, accepted on 04 Feb 2019 and first published on 12 Feb 2019


Article type: Paper
DOI: 10.1039/C8CE01058G
Citation: CrystEngComm, 2019, Accepted Manuscript

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    Fabrication of nano-patterned sapphire substrates combining nanoimprint lithography with edge effects

    Y. Chen, Z. Z. Chen, S. Jiang, C. Li, Y.F. Chen, J. Zhan, X. Kang, F. Jiao, G. Zhang and B. Shen, CrystEngComm, 2019, Accepted Manuscript , DOI: 10.1039/C8CE01058G

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